advanced power n-channel insulated gate electronics corp. bipolar transistor features v ces high speed switching i c low saturation voltage v ce(sat),typ. =1.8v@i c =20a rohs compliant & halogen-free absolute maximum ratin g s notes: 1.pulse width limited by max. junction temperature . thermal data symbol rthj-c rthj-a electrical characteristics@t j =25 o c(unless otherwise specified) symbol min. typ. max. units i ges --+ 100 na i ces - - 25 ua v ce(sat) - 1.8 2.5 v v ce(sat) -2-v v ge(th) 2-7v q g - 100 160 nc q ge -24- nc q gc -40- nc t d(on) -50- ns t r -20- ns t d(off) - 135 - ns t f - 190 380 ns e on - 0.3 - mj e off - 0.9 - mj c ies - 3400 5440 pf c oes -75- pf c res -50- pf data and specifications subject to change without notice halogen-free product collector-emitter saturation voltage v ge =15v, i c =35a 600 parameter 40 + 20 units 160 o c/w v reverse transfer capacitance rise time fall time turn-off delay time input capacitance turn-off switching loss turn-on switching loss a o c/w AP20GT60P-HF symbol v ces 600v 20a rating collector-emitter voltage units v test conditions thermal resistance junction-case v ge i c @t c =25 o c collector current gate-emitter voltage w value 1.2 a v ce =30v v ge =0v v ce =480v, i c =20a, v ge =15v, r g =5 , inductive load 150 storage temperature range operating junction temperature range parameter collector-emitter saturation voltage collector-emitter leakage current turn-on delay time a v ce =600v, v ge =0v v ge =15v thermal resistance junction-ambient v ce =v ge , i c =250ua v ge =15v, i c =20a v ge =+ 20v, v ce =0v parameter gate-to-emitter leakage current gate-emitter charge i c =20a gate threshold voltage total gate charge gate-collector charge 20 p d @t c =25 o c maximum power dissipation i cm 104 i c @t c =100 o c collector current t stg -55 to 150 201106013 o c v cc =480v pulsed collector current 1 1 output capacitance f=1.0mhz o c 62 t j g c e g c e to-220(p)
ap20gt60p-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. typical saturation voltage fig 4. typical collector- emitter voltage characteristics v.s. junction temperature -- fig 5. gate threshold voltage fi g 6. t y pical capacitance characterisitics v.s. junction temperature 2 0 40 80 120 160 200 0 4 8 12 16 v ce , collector-emitter voltage (v) i c , collector current (a) 20v 18v 15v 12v v ge =10v t c =25 o c 1 2 3 4 0 40 80 120 160 junction temperature ( o c) v ce(sat) , saturation voltage(v) i c =40a i c =20a v ge =15v 0 0.4 0.8 1.2 1.6 -50 0 50 100 150 junction temperature ( o c ) normalized v ge(th) (v) 0 40 80 120 160 200 02468 v ce , collector-emitter voltage (v) i c , collector current(a) v ge =15v t c =25 0 1000 2000 3000 4000 5000 1 5 9 13 17 21 25 29 33 v ce , collector-emitter voltage (v) capacitance (pf) f =1.0mh z c ies c oes c res t c =150 0 40 80 120 160 200 0481216 v ce , collector-emitter voltage (v) i c , collector current (a) 20v 18v 15v 12v v ge =10v t c =150 o c
a p20gt60p-hf fig7. power dissipation vs. junction fig 8. effective transient thermal temperature impedance fig 9. saturation voltage vs. v ge fig 10. saturation voltage vs. v ge fig 11. gate charge characterisitics fig 12. turn-off soa 3 0 5 10 15 20 048121620 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) i c =60a 40 a 20 a t c =25 o c 0 5 10 15 20 0 4 8 12 16 20 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) i c =60a 40 a 20 a t c = 150 o c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 40 80 120 160 0 50 100 150 200 junction temperature ( o c ) power dissipation (w) 0 4 8 12 16 0 40 80 120 160 q g , gate charge (nc) v ge , gate -emitter voltage (v) i c =20a v cc =480v 1 10 100 1000 0.1 1 10 100 1000 10000 v ce , collector-emitter voltage(v) i c , peak collector current(a) safe operating area v ge =15v t c =125 o c
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